characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, 26a) zero gate voltage drain current (v ds = 800v, v gs = 0v) zero gate voltage drain current (v ds = 640v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 5ma) 050-7103 rev a 12-2003 maximum ratings all ratings: t c = 25c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms a na volts min typ max 800 0.140 100 500 100 35 apt8014l2ll 800 52 208 30 40 893 7.14 -55 to 150 300 52 50 3200 apt8014l2ll 800v 52a 0.140 ? ? ? ? ? g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com ? lower input capacitance ? increased power dissipation ? lower miller capacitance ? easier to drive ? lower gate charge, qg ? popular to-264 max package power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switching losses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt's patented metal gate structure. power mos 7 r mosfet to-264 max
dynamic characteristics apt8014l2ll 050-7103 rev a 12-2003 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0.5 0.1 0.3 0.7 0.9 0.05 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 2.37mh, r g = 25 ? , peak i l = 52a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 52a di / dt 700a/s v r 800v t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d 52a ) reverse recovery time (i s = -i d 52a , dl s /dt = 100a/s) reverse recovery charge (i s = -i d 52a , dl s /dt = 100a/s) peak diode recovery dv / dt 5 unit amps volts ns c v/ns min typ max 52 208 1.3 930 29 10 symbol r jc r ja min typ max 0.14 40 unit c/w characteristic junction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energy turn-on switching energy 6 turn-off switching energy min typ max 7238 1402 248 285 30 170 20 19 69 15 1091 1135 1662 1383 unit pf nc ns j source-drain diode ratings and characteristics thermal characteristics test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 400v i d = 52a @ 25c resistive switching v gs = 15v v dd = 400v i d = 52a @ 25c r g = 0.6 ? inductive switching @ 25c v dd = 533v, v gs = 15v i d = 52a, r g = 1.7 ? inductive switching @ 125c v dd = 533v, v gs = 15v i d = 52a, r g = 1.7 ?
050-7103 rev a 12-2003 apt8014l2ll typical performance curves r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 5.5v 6v 6.5v 5v v gs =15 & 10v v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 7v 8v 0 5 10 15 20 25 30 012345678 0 20 40 60 80100120 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 140 120 100 80 60 40 20 0 60 50 40 30 20 10 0 2.5 2.0 1.5 1.0 0.5 0.0 i d = 26a v gs = 10v normalized to v gs = 10v @ 26a 0.0509 0.0894 0.0522f 0.988f power (watts) rc model junction temp. ( ?c) case temperature 140 120 100 80 60 40 20 0 1.40 1.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 1.2 1.1 1.0 0.9 0.8 0.7 0.6
apt8014l2ll 050-7103 rev a 12-2003 c rss c iss c oss v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 800 0 10 20 30 40 50 0 50 100 150 200 250 300 350 400 0.3 0.5 0.7 0.9 1.1 1.3 1.5 208 100 50 10 5 1 16 12 8 4 0 t c =+25c t j =+150c single pulse 10ms 1ms 100s t j =+150c t j =+25c i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 533v r g = 3 ? t j = 125c l = 100h e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 45 50 v dd = 533v i d = 52a t j = 125c l = 100h e on includes diode reverse recovery. v ds = 400v v ds = 160v v ds = 640v i d = 52a t d(on) t d(off) e on e off 160 140 120 100 80 60 40 20 0 3000 2500 2000 1500 1000 500 0 v dd = 533v r g = 3 ? t j = 125c l = 100h v dd = 533v r g = 3 ? t j = 125c l = 100h e on includes diode reverse recovery. 20,000 10,000 1,000 100 200 100 10 1 operation here limited by r ds (on) 140 120 100 80 60 40 20 0 12000 10000 8000 6000 4000 2000 0
050-7103 rev a 12-2003 apt8014l2ll typical performance curves figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) bsc 2-plcs. to-264 max tm (l2) package outline apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. i c d.u.t. apt30df60 v ce figure 20, inductive switching test circuit v dd g t j = 125 c drain current drain voltage gate voltage 90% 0 10% 90% t d(off) t f switching energy 10 % t d(on) 90% 10 % 5 % t j = 125 c t r switching energy 5 %
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